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DRA2123E0L (Panasonic Electronic Components - Semiconductor Products)

DRA2123E0L
Параметры:
Производитель Panasonic Electronic Components - Semiconductor Products
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce 6 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 200mW
Тип монтажа Surface Mount
Исполнение / Корпус TO-236-3, SC-59, SOT-23-3
Упаковка Cut Tape (CT)
Supplier Device Package Mini3-G3-B
Количество Цена
120.81
2511.54
1008.73
2506.18
5004.94
10003.79

DRA2123E0L Panasonic Electronic Components - Semiconductor Products
DRA2123E0L
2 500 000,11 Р
Panasonic Electronic Components - Semiconductor Products
Кол-во: 500 000 шт.
Цена за 1 шт: 5 Р
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